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| FDW2516NZ March 2003 FDW2516NZ Common Drain N-Channel 2.5V specified PowerTrench(R) MOSFET General Description This dual N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced PowerTrench process to optimize the RDS(ON) @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains on one side of the package. Features * 5.8 A, 20 V RDS(ON) = 30 m @ VGS = 4.5 V RDS(ON) = 40 m @ VGS = 2.5 V * Isolated source and drain pins * ESD protection diode (note 3) * High performance trench technology for extremely low RDS(ON) @ VGS = 2.5 V * Low profile TSSOP-8 package Applications * Li-Ion Battery Pack D D D D G2 S2 G1 S1 Pin 1 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 20 12 (Note 1a) Units V V A W C 5.8 20 1.6 1.1 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA RJA Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 77 114 C/W C/W Package Marking and Ordering Information Device Marking 2516NZ Device FDW2516NZ Reel Size 13'' Tape width 12mm Quantity 3000 units (c)2003 Fairchild Semiconductor Corporation FDW2516NZ Rev B FDW2516NZ Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 20 Typ Max Units V Off Characteristics ID = 250 A, Referenced to 25C VDS = 16 V, VGS = 12 V, VGS = 0 V VDS = 0 V 10 1 10 mV/C A A On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 5.8 A VGS = 2.5 V, ID = 5.0 A VGS = 4.5 V, ID = 5.8 A, TJ=125C VGS = 4.5 V, VDS = 5 V, VDS = 5 V ID = 5.8 A 0.6 1.0 -0.3 25 32 33 1.5 V mV/C 30 40 43 m ID(on) gFS 10 25 A S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = 10 V, f = 1.0 MHz VGS = 15 mV, V GS = 0 V, 745 205 115 pF pF pF f = 1.0 MHz 1.6 Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 10 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 9 6 15 8 17 11 28 16 12 ns ns ns ns nC nC nC VDS = 10 V, VGS = 5 V ID = 5.8 A, 9 1.5 2.4 FDW2516NZ Rev B FDW2516NZ Electrical Characteristics Symbol IS VSD trr Qrr TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 1.3 A V nS nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 1.3 A Voltage Diode Reverse Recovery Time IF = 5.8 A diF/dt = 100 A/s Diode Reverse Recovery Charge (Note 2) 0.7 17 1.2 (Note 2) 5 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 77C/W when mounted on a 1in2 pad of 2 oz copper b) 114C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDW2516NZ Rev B FDW2516NZ Typical Characteristics 20 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 VGS = 10.0V ID, DRAIN CURRENT (A) 16 2.5V VGS = 2.0V 2 4.5V 12 3.0V 2.0V 8 1.6 2.5V 3.0V 1.2 3.5V 4.5V 6.0V 10.0V 4 1.5V 0 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 0.8 0 4 8 12 16 20 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.07 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 5.8A VGS = 4.5V 1.4 ID = 2.9A 0.06 0.05 1.2 0.04 TA = 125oC 0.03 1 TA = 25oC 0.02 0.8 -50 -25 0 25 50 75 100 o 125 150 0.01 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 20 IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 VDS = 5V ID, DRAIN CURRENT (A) 16 VGS = 0V 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55 C o 12 8 TA = 125 C 25o 4 125oC 0 0.5 1 1.5 2 2.5 VGS, GATE TO SOURCE VOLTAGE (V) o 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2516NZ Rev B FDW2516NZ Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 5.8A 8 VDS = 5V CAPACITANCE (pF) 1200 f = 1MHz VGS = 0 V 900 Ciss 10V 6 15V 4 600 Coss 300 Crss 2 0 0 5 10 Qg, GATE CHARGE (nC) 15 20 0 0 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 50 RDS(ON) LIMIT 100us ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 1 VGS = 4.5V SINGLE PULSE RJA = 114oC/W TA = 25 C 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) o 40 SINGLE PULSE RJA = 114C/W TA = 25C 30 10s DC 20 0.1 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) * RJA RJA =114 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW2516NZ Rev B |
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